SUM70090E Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

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SUM70090E
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () MAX.
0.0089 at V_GS = 10 V
100
0.0093 at V_GS = 7.5 V
I_D (A) ^c
50
50
Q_g (TYP.)
33 nC
TO-263
Top View
S
D
G
Ordering Information:
SUM70090E-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• ThunderFET^® power MOSFET
• Maximum 175 °C junction temperature
• Q_gd / Q_gs ratio < 1 optimizes switching
characteristics
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
• DC/DC converter
• Power tools
• Motor drive switch
• DC/AC inverter
• Battery management
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 100 μs)
Avalanche Current
Single Avalanche Energy ^a
Maximum Power Dissipation ^a
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
L = 0.1 mH
T_C = 25 °C
T_C = 70 °C ^b
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
100
± 20
50 ^c
50 ^c
120
40
80
125
87.5
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) ^b
Junction-to-Case (Drain)
Notes
a. Duty cycle  1 %.
b. When mounted on 1" square PCB (FR4 material).
c. Package limited.
SYMBOL
R_thJA
R_thJC
LIMIT
40
1.2
UNIT
°C/W
S16-0163-Rev. A, 01-Feb-16
1
Document Number: 64432
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000