SUM45N25-58_08 Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175 °C MOSFET

SUM45N25-58
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.8
100
V_GS = 10 V
2.4
I_D = 20 A
2.0
T_J = 150 °C
T_J = 25 °C
1.6
10
1.2
0.8
0.4
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1
0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
100
10
I_AV (A) at T_A = 25 °C
1
I_AV (A) at T_A = 150 °C
0.1
0.00001 0.0001 0.001 0.01
0.1
1
t_in (Sec)
Avalanche Current vs. Time
300
290
I_D = 1.0 mA
280
270
260
250
240
230
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown
vs. Junction Temperature
www.vishay.com
4
Document Number: 72314
S-70311-Rev. C, 12-Feb-07