SUM45N25-58_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175 °C MOSFET

New Product
SUM45N25-58
Vishay Siliconix
N-Channel 250-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
r_DS(on) (Ω)
250
0.058 at V_GS = 10 V
0.062 at V_GS = 6 V
I_D (A)
45
43
TO-263
FEATURES
• TrenchFET^® Power MOSFETS
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
APPLICATIONS
• Primary Side Switch
• Plasma Display Panel Sustainer Function
RoHS
COMPLIANT
D
G DS
Top View
Ordering Information: SUM45N25-58-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Typical Avalanche Voltage^d
V_{DS (Avalanche)}Typ
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 175 °C)
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed Drain Current
I_DM
Avalanche Current
I_AR
Repetitive Avalanche Energy^a
L = 0.1 mH
E_AR
Maximum Power Dissipation^a
T_C = 25 °C
T_A = 25 °C^c
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Guaranteed by design
Document Number: 72314
S-70311-Rev. C, 12-Feb-07
Symbol
R_thJA
R_thJC
Limit
250
300
± 30
45
25
90
35
61
375^b
3.75
- 55 to 175
Limit
40
0.4
Unit
V
A
mJ
W
°C
Unit
°C/W
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