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SUM40N15-38_08 Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 150-V (D-S) 175C MOSFET
SUM40N15-38
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.7
2.4
VGS = 10 V
ID = 15 A
2.1
1.8
1.5
1.2
0.9
0.6
0.3
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
100
TJ = 150_C
10
TJ = 25_C
1
0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
195
185
ID = 1 mA
175
165
155
145
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (_C)
www.vishay.com
4
Document Number: 72155
S-03534—Rev. A, 24-Mar-03