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SUM40N15-38_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 150-V (D-S) 175C MOSFET
New Product
SUM40N15-38
Vishay Siliconix
N-Channel 150-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
150
rDS(on) (W)
0.038 @ VGS = 10 V
0.042 @ VGS = 6 V
ID (A)
40
38
D
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D New Low Thermal Resistance Package
D PWM Optimized
APPLICATIONS
D Primary Side Switch
TO-263
G DS
Top View
Ordering Information: SUM40N15-38
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
150
VGS
"20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_Cc
ID
IDM
IAR
EAR
PD
TJ, Tstg
40
23
80
40
80
166b
3.75
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount TO-263c)
Junction-to-Case (Drain)
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 72155
S-03534—Rev. A, 24-Mar-03
Symbol
RthJA
RthJC
Limit
40
0.9
Unit
_C/W
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