SUM110P04-04L Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 40-V (D-S) 175-LC MOSFET

SUM110P04-04L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
I_D = 30 A
1.7
1.4
1.1
0.8
0.5
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
Avalanche Current vs. Time
1000
100
10
I_AV (A) @ T_A = 25_C
1
I_AV (A) @ T_A = 150_C
0.1
0.0001
0.001
0.01
0.1
t_in (Sec)
1
10
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
T_J = 25_C
1
0.0
0.3
0.6
0.9
1.2
V_SD − Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
48
I_D = 250 mA
46
44
42
40
38
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
www.vishay.com
4
Document Number: 72437
S-40840—Rev. B, 03-May-04