SUM110P04-04L Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 40-V (D-S) 175-LC MOSFET

SUM110P04-04L
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = −250 mA
V_DS = V_GS, I_D = −250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = −40 V, V_GS = 0 V
V_DS = −40 V, V_GS = 0 V, T_J = 125_C
V_DS = −40 V, V_GS = 0 V, T_J = 175_C
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −30 A
V_GS = −10 V, I_D = −30 A, T_J = 125_C
V_GS = −10 V, I_D = −30 A, T_J = 175_C
V_GS = −4.5 V, I_D = −20 A
V_DS = −15 V, I_D = −30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Gate Resistance
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = −25 V, f = 1 MHz
V_DS = −20 V, V_GS = −10 V, I_D = −110 A
V_DD = −20 V, R_L = 0.18 W
I_D ] −110 A, V_GEN = −10 V, R_g = 2.5 W
Source-Drain Diode Ratings and Characteristics (T_C = 25_C)^b
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I_s
I_SM
V_SD
t_rr
I_RM(REC)
Q_rr
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
I_F = −85 A, V_GS = 0 V
I_F = −85 A, di/dt = 100 A/ms
Min Typ Max Unit
−40
V
−1
−3
"100
nA
−1
−50
mA
−250
−120
A
0.0034 0.0042
0.0063
W
0.0076
0.005 0.0062
20
S
11200
1650
pF
1200
235
350
45
nC
65
3
W
25
40
30
45
ns
190
300
110
165
−110
A
−240
−1.0
−1.5
V
65
100
ns
−3.7
−5.6
A
0.12
0.28
mC
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Document Number: 72437
S-40840—Rev. B, 03-May-04