SUM110N06-3M9H Datasheet, PDF (4/6 Pages) Vishay Siliconix – Low Thermal Resistance Package

SUM110N06-3m9H
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
V_GS = 10 V
I_D = 30 A
1.7
1.4
T_J = 150 °C
10
T_J = 25 °C
1.1
0.8
0.5
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1000
100
I_AV (A) at T_A = 25 °C
10
I_AV (A) at T_A = 150 °C
1
0.1
0.00001 0.0001 0.001 0.01
0.1
1
t_in (Sec)
Avalanche Current vs. Time
1
0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
74
72
I_D = 10 mA
70
68
66
64
62
60
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown
vs. Junction Temperature
www.vishay.com
4
Document Number: 73236
S-70534-Rev. C, 26-Mar-07