SUM110N06-3M9H Datasheet, PDF (1/6 Pages) Vishay Siliconix – Low Thermal Resistance Package

SUM110N06-3m9H
Vishay Siliconix
N-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
r_DS(on) (Ω)
60
0.0039 at V_GS = 10 V
I_D (A)
110^a
Q_g (Typ)
200
FEATURES
• TrenchFET^® Power MOSFET
• 175 °C Junction Temperature
• Low Thermal Resistance Package
• High Threshold Voltage At High Temperature
• 100 % R_g Tested
RoHS
COMPLIANT
TO-263
G DS
Top View
Ordering Information: SUM110N06-3m9H-E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 175 °C)
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed Drain Current
I_DM
Single Pulse Avalanche Current
I_AS
Single Pulse Avalanche Energy
L = 0.1 mH
E_AS
Maximum Power Dissipation^b
T_C = 25 °C
T_A = 25 °C^d
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
60
± 20
110^a
110^a
440
70
245
375^c
3.75
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
PCB Mount^d
Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Symbol
R_thJA
R_thJC
Limit
40
0.4
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
www.vishay.com
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