SUM110N06-05L Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S) 175-C MOSFET

SUM110N06-05L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 110 A
2.0
Source-Drain Diode Forward Voltage
1.5
T_J = 150_C
T_J = 25_C
10
1.0
0.5
0.0
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
1
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
100
10
I_AV (A) @ T_J = 25_C
1
I_AV (A) @ T_J = 150_C
0.1
0.00001 0.0001
0.001
0.01
0.1
1
t_in (Sec)
Drain Source Breakdown
vs. Junction Temperature
80
I_D = 10 m A
75
70
65
60
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
www.vishay.com
4
Document Number: 72006
S-32618—Rev. B, 29-Dec-03