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SUM110N06-05L Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S) 175-C MOSFET
New Product
SUM110N06-05L
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.0052 @ VGS = 10 V
0.0072 @ VGS = 4.5 V
ID (A)
110 a
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D New Low Thermal Resistance Package
APPLICATIONS
D Automotive and Industrial
D
TO-263
G DS
Top View
Ordering Information: SUM110N06-05L
SUM110N06-05L—E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
VGS
"20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_C d
ID
IDM
IAR
EAR
PD
TJ, Tstg
110a
82a
300
75
280
230c
3.75
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient—PCB Mountd
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72006
S-32618—Rev. B, 29-Dec-03
Symbol
RthJA
RthJC
Limit
40
0.65
Unit
_C/W
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