SUM110N04-2M3L Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 40-V (D-S) 175 °C MOSFET

SUM110N04-2m3L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
V_GS = 10 V
I_D = 30 A
1.7
1.4
T_J = 150 °C
T_J = 25 °C
10
1.1
0.8
0.5
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1000
1
0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
50
100
I_AV (A) at T_A = 25 °C
10
1 ^IAV ^{(A) at T}A ^{= 150 °C}
48
I_D = 10 mA
46
44
42
0.1
0.00001 0.0001 0.001 0.01 0.1
1
10
t_in (s)
Avalanche Current vs. Time
40
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs.
Junction Temperature
www.vishay.com
4
Document Number: 73040
S-80272-Rev. B, 11-Feb-08