SUM110N04-2M3L Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 40-V (D-S) 175 °C MOSFET

SUM110N04-2m3L
Vishay Siliconix
N-Channel 40-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
r_DS(on) (Ω)
40
0.0023 at V_GS = 10 V
0.003 at V_GS = 4.5 V
I_D (A)
110^a
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
D
TO-263
G DS
Top View
Ordering Information: SUM110N04-2m3L-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 175 °C)
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed Drain Current
I_DM
Avalanche Current, Single Pulse
I_AS
Repetitive Avalanche Energy, Single Pulse
L = 0.1 mH
E_AS
Maximum Power Dissipation
T_C = 25 °C
P_D
T_A = 25 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
40
± 20
110^a
110^a
440
75
280
375^b
3.75
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes:
a. Package limited.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
PCB Mount^c
Symbol
R_thJA
R_thJC
Typical
40
0.4
RoHS
COMPLIANT
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 73040
S-80272-Rev. B, 11-Feb-08
www.vishay.com
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