SUD50P04-13L_09 Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 40-V (D-S) 175 °C MOSFET

SUD50P04-13L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
1.8
100
V_GS = 10 V
1.6
I_D = 30 A
1.4
1.2
10
T_J = 150 °C
T_J = 25 °C
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
75
60
1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
200
Limited by r_DS(on)
100
10 µs
100 µs
45
Limited By Package
30
15
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Maximum Avalanche Drain Current
vs. Case Temperature
2
1
Duty Cycle = 0.5
10
1
0.1
0.1
T_C = 25 °C
Single Pulse
1 ms
10 ms
100 ms
DC
1
10
100
V_DS - Drain-to-Source Voltage (V)
Safe Operating Area
0.2
0.1 ^0.1
0.05
0.02
Single Pulse
0.01
10^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
1
10
100
1K
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 73009
S-71660-Rev. B, 06-Aug-07