SUD50P04-13L_09 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 40-V (D-S) 175 °C MOSFET

New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
100
100
V_GS = 10 thru 5 V
80
80
SUD50P04-13L
Vishay Siliconix
60
4V
40
20
2V
3V
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
80
T_C = - 55 °C
70
60
50
25 °C
40
125 °C
30
20
10
0
0
10
20
30
40
50
V_GS - Gate-to-Source Voltage (V)
Transconductance
5000
4500
4000
3500
C_iss
3000
2500
2000
1500
1000
500
C_rss
0
0
8
C_oss
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
60
40
T_C = 125 °C
20
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.05
0.04
0.03
0.02
V_GS = 4.5 V
0.01
V_GS = 10 V
0.00
0
10
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
8
V_DS = 20 V
I_D = 50 A
6
4
2
0
0 8 16 24 32 40 48 56 64
Q_g - Total Gate Charge (nC)
Gate Charge
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3