SUD50N04-8M8P Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

SUD50N04-8m8P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
I_D = 20 A
V_GS = 10 V
1.7
10
1.4
1
V_GS = 4.5 V
1.1
0.1
0.8
0.01
T_J = 25 °C
T_J = 150 °C
T_J = - 55 °C
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.030
0.025
I_D = 7.2 A
0.020
0.015
0.010
T_J = 125 °C
0.005
T_J = 25 °C
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
500
400
300
200
T_A = 25 °C
100
0
0.0001 0.001 0.01
0.1
1
10
Time (s)
Single Pulse, Junction-to-Ambient
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.2
- 0.2
I_D = 1 mA
- 0.6
I_D = 250 µA
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
1000
Limited by R_DS(on)*
100
10
1
10 µs
100 µs
1 ms
10 ms,
100 ms, DC
0.1
T_C = 25 °C
Single Pulse
BVDSS
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
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4
Document Number: 68647
S-81008-Rev. A, 05-May-08