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SUD50N04-8M8P Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
VGS = 10 thru 5 V
VGS = 4 V
80
80
SUD50N04-8m8P
Vishay Siliconix
60
60
40
20
0
0.0
1.5
VGS = 3 V
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
40
20
0
0
0.012
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.2
0.9
0.6
TC = 25 °C
0.3
TC = 125 °C
TC = - 55 °C
0.0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3200
Ciss
2400
1600
800
Coss
Crss
0
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 68647
S-81008-Rev. A, 05-May-08
0.010
0.008
0.006
VGS = 4.5 V
VGS = 10 V
0.004
0
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 20 A
8
VDS = 10 V
VDS = 20 V
6
VDS = 30 V
4
2
0
0
10
20
30
40
Qg - Total Gate Charge (nC)
Gate Charge
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3