SUD50N03-07 Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

SUD50N03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 45 A
2.0
1.5
1.0
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0.5
0.0
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
24
1
0
0.3
0.6
0.9
1.2
1.5
V_SD − Source-to-Drain Voltage (V)
Safe Operating Area
500
20
100
10, 100 ms
Limited
16
by r_DS(on)
1 ms
10
10 ms
12
100 ms
8
1s
1
T_A = 25_C
4
Single Pulse
0
0
25 50 75 100 125 150 175
dc
0.1
0.1
1
10
100
T_A − Ambient Temperature (_C)
V_DS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
0.01 _10−4
Single Pulse
10^−3
10^−2
10^−1
1
10
Square Wave Pulse Duration (sec)
www.vishay.com
4
100
500
Document Number: 70767
S-40272—Rev. E, 23-Feb-04