SUD50N03-07 Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

SUD50N03-07
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.007 @ V_GS = 10 V
30
0.010 @ V_GS = 4.5 V
TO-252
I_D (A)
20
16
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% R_g Tested
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD50N03-07
SUD50N03-07—E3 ( Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 100_C
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
20
14
100
20
136
5^a
−55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70767
S-40272—Rev. E, 23-Feb-04
Symbol
R_thJA
R_thJC
Typical
0.85
Maximum
30
1.1
Unit
_C/W
www.vishay.com
1