SUD50N025-06P Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

SUD50N025-06P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
100
10
T_J = 150_C
On-Resistance vs. Gate-to-Source Voltage
0.040
0.035
I_D = 20 A
0.030
1
0.1
T_J = 25_C
0.01
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
0.025
0.020
0.015
0.010
0.005
0.000
2
T_J = 125_C
T_J = 25_C
3 4 5 6 7 8 9 10
V_GS − Gate-to-Source Voltage (V)
Threshold Voltage
0.6
0.3
I_D = 250 mA
0.0
−0.3
−0.6
Single Pulse Power, Junction-to-Ambient
720
600
480
T_A = 25_C
360
240
−0.9
120
−1.2
−50 −25
0 25 50 75 100 125 150 175
T_J − Temperature (_C)
0
0.001 0.01
Safe Operating Area, Junction-to-Case
1000
0.1
1
10
Time (sec)
100 1000
*Limited by r_DS(on)
100
10 ms
100 ms
10
1 ms
10 ms
1
100 ms, dc
T_C = 25_C
Single Pulse
0.1
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
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4
Document Number: 73349
S-50934—Rev. A, 09-May-05