SUD50N025-06P Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

New Product
SUD50N025-06P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
25
r_DS(on) (W)
0.0062 @ V_GS = 10 V
0.010 @ V_GS = 4.5 V
I_D (A)^{a, e}
78
62
Q_g (Typ)
20.5 nC
TO-252
FEATURES
D TrenchFETr Power MOSFET
D 100% R_g Tested
D RoHS Compliant
APPLICATIONS
D DC/DC Conversion, Low-Side
− Desktop PC
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N025-06P—E3 (Lead (Pb)-Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 70_C
T_A = 25_C
T_A = 70_C
T_C = 25_C
T_A = 25_C
L = 0.1 mH
T_C = 25_C
T_C = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
25
"20
78^{a, e}
65^{a, e}
32^{b, c}
25^{b, c}
100
43
7.1^{b, c}
35
61.25
65^a
45^a
10.7^{b, c}
7.5^{b, c}
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Case
t p 10 sec
Steady State
R_thJA
R_thJC
Notes:
a. Based on T_C = 25_C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 sec
d. Maximum under steady state conditions is 90 _C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
Document Number: 73349
S-50934—Rev. A, 09-May-05
Typical
11
1.9
Maximum
14
2.3
Unit
_C/W
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