SUD23N06-31_08 Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 60-V (D-S), MOSFET

SUD23N06-31
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.1
100
I_D = 15 A
V_GS = 10 V
1.8
10
1.5
1
V_GS = 4.5 V
1.2
0.1
0.9
0.01
T_J = 150 °C
T_J = 25 °C
T_J = - 50 °C
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.08
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.2
0.06
T_J = 125 °C
- 0.1
0.04
- 0.4
I_D = 1 mA
0.02
T_J = 25 °C
- 0.7
I_D = 250 µA
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
500
400
300
200
100
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
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4
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10 µs
10
100 µs
1 ms
1
10 ms
100 ms, DC
0.1
T_C = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Single Pulse Power, Junction-to-Case
Document Number: 68857
S-81948-Rev. A, 25-Aug-08