SUD23N06-31_08 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 60-V (D-S), MOSFET

New Product
N-Channel 60-V (D-S), MOSFET
SUD23N06-31
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
60
0.031 at V_GS = 10 V
0.045 at V_GS = 4.5 V
I_D (A)^a
9.1
7.6
Q_g (Typ.)
6.5 nC
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• DC/DC Converters
TO-252
D
RoHS
COMPLIANT
Drain Connected to Tab
GDS
Top View
Ordering Information: SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
± 20
T_C = 25 °C
21.4
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
17.1
9.1^a
Pulsed Drain Current
T_A = 70 °C
7.6^a
A
I_DM
50
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
20.8
3.8^a
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
20
E_AS
20
mJ
T_C = 25 °C
31.25
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
20
5.7^a
W
T_A = 70 °C
3.6^a
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Case
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJC
Document Number: 68857
S-81948-Rev. A, 25-Aug-08
Typical
18
3.2
Maximum
22
4.0
Unit
°C/W
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