SUD23N06-31L Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175C MOSFET, Logic Level

SUD23N06-31L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 15 A
2.0
Source-Drain Diode Forward Voltage
1.5
T_J = 150_C
T_J = 25_C
10
1.0
0.5
0.0
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
25
20
15
1
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Safe Operating Area
100
Limited
by r_DS(on)
10
10
1
5
T_C = 25_C
Single Pulse
0
0
2
25 50 75 100 125 150 175
0.1
0.1
1
10
T_A - Ambient Temperature (_C)
V_DS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.05
0.02
Single Pulse
1.5
10 ms
100 ms
1 ms
10 ms
100 ms
dc
100
0.01 ₁₀-4
www.vishay.com
4
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
Square Wave Pulse Duration (sec)
1
10
Document Number: 72145
S-03536—Rev. A, 24-Mar-03