SUD23N06-31L Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175C MOSFET, Logic Level

SUD23N06-31L
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
V_DS (V)
60
r_DS(on) (W)
0.031 @ V_GS = 10 V
0.045 @ V_GS = 4.5 V
I_D (A)^a
23
19.5
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
APPLICATIONS
D Automotive
- 12-V Systems
D
TO-252
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD23N06-31L
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)^b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C
V_GS
I_D
I_DM
I_S
I_AR
E_AR
P_D
T_J, T_stg
"20
23
16.5
50
23
20
20
100
3^a
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
t p 10 sec.
Steady State
Notes:
a. Surface mounted on 1” x 1” FR4 Board, t v 10 sec.
Document Number: 72145
S-03536—Rev. A, 24-Mar-03
Symbol
R_thJA
R_thJC
Typical
18
40
3.2
Limit
22
50
4
Unit
_C/W
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