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SUD10P06-280L Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S), 175C MOSFET, Logic Level | |||
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SUD/SUU10P06-280L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
VGS = 10 V
ID = 5 A
2.0
Source-Drain Diode Forward Voltage
1.5
TJ = 150_C
10
1.0
TJ = 25_C
0.5
0.0
â50 â25 0
25 50 75 100 125 150 175
TJ â Junction Temperature (_C)
THERMAL RATINGS
Drain Current vs. Case Temperature
12
1
0.3
0.6
0.9
1.2
VSD â Source-to-Drain Voltage (V)
Safe Operating Area
30
10
9
Limited
by rDS(on)
6
1
3
TC = 25_C
Single Pulse
0
0
25 50 75 100 125 150 175
TC â Case Temperature (_C)
0.1
0.1
1
10
VDS â Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
1.5
10 ms
100 ms
1 ms
10 ms
100 ms
dc, 1 s
100
0.2
0.1
0.1
0.05
0.02
0.01
10â4
Single Pulse
10â3
www.vishay.com S FaxBack 408-970-5600
2-4
10â2
Square Wave Pulse Duration (sec)
10â1
1
3
Document Number: 70780
S-20349âRev. F, 18-Apr-02
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