SUD10P06-280L Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S), 175C MOSFET, Logic Level

SUD/SUU10P06-280L
Vishay Siliconix
SPECIFICATIONS (T_J =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_DS = 0 V, I_D = –250 mA
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –60 V, V_GS = 0 V
V_DS = –60 V, V_GS = 0 V, T_J = 125_C
V_DS = –60 V, V_GS = 0 V, T_J = 175_C
V_DS = –5 V, V_GS = –10 V
V_GS = –10 V, I_D = –5 A
V_GS = –10 V, I_D = –5 A, T_J = 125_C
V_GS = –10 V, I_D = –5 A, T_J = 175_C
V_GS = –4.5 V, I_D = –2 A
V_DS = –15 V, I_D = –5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_DS = –25 V, V_GS = 0 V, f = 1 MHz
V_DS = –30 V, V_GS = –10 V, I_D = –10 A
V_DD = –30 V, R_L = 3 W
I_D ] 10 A, V_GEN = –10 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristics (T_C = 25_C)^a
Pulsed Current
Forward Voltage^b
Reverse Recovery Time
I_SM
V_SD
I_F = 10 A, V_GS = 0 V
t_rr
I_F = 10 A, di/dt = 100 A/ms
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min
–60
–1.0
–10
Typ^a Max Unit
V
–2.0
–3.0
"100
nA
–1
–50
mA
–150
A
0.130
0.170
0.31
0.375
W
0.210
0.280
6
S
635
100
pF
30
11.5
25
3.5
nC
2
9
20
16
20
ns
17
30
19
35
–20
A
–1.3
V
50
80
ns
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Document Number: 70780
S-20349—Rev. F, 18-Apr-02