SUB85N08-08 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 75-V (D-S) 175 Degree Celcious MOSFET

SUP/SUB85N08-08
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 30 A
2.0
Source-Drain Diode Forward Voltage
1.5
10
T_J = 150_C
T_J = 25_C
1.0
0.5
0
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
1
0
0.3
0.6
0.9
1.2
V_SD – Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000
100
I_AV (A) @ T_A = 25_C
10
I_AV (A) @ T_A = 150_C
1
0.1
0.00001 0.0001 0.001 0.01
0.1
1
t_in (Sec)
Drain Source Breakdown vs.
Junction Temperature
95
90
I_D = 250 mA
85
80
75
70
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
www.vishay.com
2-4
Document Number: 71165
S-01884—Rev. B, 28-Aug-00