 English |
|
|
|
|
|
|
|
| SUB85N08-08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 75-V (D-S) 175 Degree Celcious MOSFET | |||
| |||
| ◁ |
SUP/SUB85N08-08
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V, TJ = 175_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VDS = 15 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 35 V, VGS = 10 V, ID = 85 A
VDD = 35 V, RL = 0.4 W
ID ^ 85 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IS
ISM
VSD
trr
IRM(REC)
Qrr
IF = 85 A, VGS = 0 V
IF = 85 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
75
V
2.5
"100
nA
1
50
mA
250
120
A
0.0063
0.008
0.014
W
0.018
30
S
5800
900
pF
285
100
150
35
nC
25
20
30
115
175
ns
50
75
80
120
85
A
240
1.0
1.5
V
70
120
ns
4
7
A
0.14
0.30
mC
www.vishay.com
2-2
Document Number: 71165
S-01884âRev. B, 28-Aug-00
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese