SUB75N08-09L Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 75-V (D-S), 175C MOSFET

SUP/SUB75N08-09L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 75 A
2.0
10
1.5
1.0
1
0.5
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Avalanche Current vs. Time
300
100
I_AV (A) @ T_J = 25_C
10
I_AV (A) @ T_J = 150_C
1
0.0001
0.001
0.01
0.1
1
t_in (Sec)
Drain-Source Breakdown Voltage vs.
Junction Temperature
100
90
80
70
60
–50 –25 0 25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70870
S-60951—Rev. A, 26-Apr-99