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SUB75N08-09L Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 75-V (D-S), 175C MOSFET
New Product
SUP/SUB75N08-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
200
VGS = 10, 9, 8, 7, 6, 5 V
200
160
4V
150
120
Transfer Characteristics
100
50
0
0
200
160
120
80
3V
2
4
6
8
10
VDS – Drain-to-Source Voltage (V)
Transconductance
TC = –55_C
25_C
125_C
40
0
0
20
40
60
80
100
VGS – Gate-to-Source Voltage (V)
9000
Capacitance
7500
Ciss
6000
4500
3000
1500
0
0
Coss
Crss
15
30
45
60
75
VDS – Drain-to-Source Voltage (V)
Document Number: 70870
S-60951—Rev. A, 26-Apr-99
80
TC = 125_C
40
25_C
–55_C
0
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
0.012
0.010
0.008
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
0.006
0.004
0.002
0
0
20
40
60
80
100 120
ID – Drain Current (A)
Gate Charge
10
8
VGS = 30 V
ID = 75 A
6
4
2
0
0
20
40
60
80
100 120
Qg – Total Gate Charge (nC)
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