SUB15P01-52 Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 8-V (D-S), 175C MOSFET

SUP/SUB15P01-52
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
1.6
30
V_GS = 4.5 V
I_D = 10 A
1.4
10
1.2
1.0
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0.8
0.6
–50 –25 0 25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
18
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
100.0
Safe Operating Area
15
100 ms
12
10.0 Limited
by r_DS(on)
1 ms
9
10 ms
100 ms
dc, 1 s
6
1.0
T_C = 25_C
3
Single Pulse
0
0
25 50 75 100 125 150 175
T_C – Case Temperature (_C)
0.1
0.1
1.0
10.0
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
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4
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71085
S-20966—Rev. C, 01-Jul-02