SUB15P01-52 Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 8-V (D-S), 175C MOSFET

SUP/SUB15P01-52
Vishay Siliconix
P-Channel 8-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.052 @ V_GS = –4.5 V
–8
0.070 @ V_GS = –2.5 V
0.105 @ V_GS = –1.8 V
TO-220AB
I_D (A)
–15
–10
–10.5
TO-263
DRAIN connected to TAB
GD S
Top View
SUP15P01-52
G DS
Top View
SUB15P01-52
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T_J = 175_C)
Pulsed Drain Current
T_C = 25_C
T_C = 125_C
Avalanche Current
Repetitive Avalanche Energy^b
L = 0.1 mH
Power Dissipation
T_C = 25_C (TO-220AB and TO-263)
T_A = 25_C (TO-263)^c
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
–8
"8
–15
–8.7
–25
–10
5
25^d
2.1
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Junction-to-Lead
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
PCB Mount (TO-263)^c
Document Number: 71085
S-20966—Rev. C, 01-Jul-02
Symbol
R_thJA
R_thJC
R_thJL
Typical
58
5
16
Maximum
70
6
20
Unit
_C/W
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