SQ4153EY_15 Datasheet, PDF (4/11 Pages) Vishay Siliconix – Automotive P-Channel 12 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
5
I_D = 10.5 A
V_DS = 6 V
4
1.5
I_D = 14 A
1.3
SQ4153EY
Vishay Siliconix
3
1.1
V_GS = 4.5 V
V_GS = 2.5 V
2
0.9
1
0.7
0
0
100
30
60
90
120
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
10
T_J = 150 °C
0.04
1
0.1
T_J = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.0
0.7
I_D = 600 μA
0.4
I_D = 2 mA
0.1
0.03
0.02
0.01
T_J = 150 °C
T_J = 25 °C
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
- 15
I_D = 1 mA
- 16
- 17
- 18
- 0.2
- 19
- 0.5
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
- 20
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Threshold Voltage
Breakdown Voltage vs. Junction Temperature
S15-2200, Rev. A, 14-Sep-15
4
Document Number: 66897
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000