SQ4153EY_15 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive P-Channel 12 V (D-S) 175 °C MOSFET

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SQ4153EY
Vishay Siliconix
Automotive P-Channel 12 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = -4.5 V
R_DS(on) (Ω) at V_GS = -2.5 V
R_DS(on) (Ω) at V_GS = -1.8 V
I_D (A)
Configuration
Package
-12
0.0065
0.0080
0.0130
-25
Single
SO-8
FEATURES
• TrenchFET^® power MOSFET
• AEC-Q101 qualified
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SO-8 Single
D
D5
D6
D7
8
S
G
4
3G
2S
1S
S
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ^a
T_C = 25 °C
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction) ^a
I_S
Pulsed Drain Current ^b
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation ^b
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
-12
±8
-25
-14
-6.5
-100
-19
18
7.1
2.3
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
PCB Mount ^c
SYMBOL
R_thJA
R_thJF
LIMIT
85
21
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-2200, Rev. A, 14-Sep-15
1
Document Number: 66897
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000