SISB46DN Datasheet, PDF (4/13 Pages) Vishay Siliconix – Dual N-Channel 40 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiSB46DN
Vishay Siliconix
Axis Title
100
10000
T_J = 150 °C
10
1000
T_J = 25 °C
1
100
0.1
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source-Drain Diode Forward Voltage
0.04
0.03
0.02
0.01
Axis Title
I_D = 5 A
10000
1000
T_J = 125 °C
100
T_J = 25 °C
0
10
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Axis Title
2.2
10000
2.0
1.8
1000
1.6
1.4
100
I_D = 250 μA
1.2
1.0
-50 -25
10
0 25 50 75 100 125 150
T_J - Temperature (°C)
2nd line
Threshold Voltage
50
40
30
20
10
0
0.001 0.01
0.1 1
10
Time (s)
100 600
Single Pulse Power, Junction-to-Ambient
100 ^IDM ^limited
Limited by R_DS(on) ⁽¹⁾
Axis Title
10000
10
I_D limited
1
100 μs
1000
1 ms
0.1
T_A = 25 °C
Single pulse
0.01
0.1
1
BVDSS limited
10
10 ms
100 ms¹⁰⁰
1s
10 s
DC
10
100
V_DS - Drain-to-Source Voltage (V)
(1) _{VGS > minimum VGS at which RDS(on) is specified}
Safe Operating Area, Junction-to-Ambient
S16-1524-Rev. A, 08-Aug-16
4
Document Number: 76655
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000