SIB488DK Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 12 V (D-S) MOSFET

New Product
SiB488DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
0.04
10
0.03
T_J = 150 °C
T_J = 25 °C
1
0.02
0.01
I_D = 6.3 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.8
I_D = 250 µA
0.7
0.6
0.5
0.4
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature(°C)
Threshold Voltage
100
Limited by R_DS(on)*
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01 0.1
1
10
100 1000
Pulse (s)
Single Pulse Power, Junction-to-Ambient
10
100 µs
1 ms
1
10 ms
100 ms
1s
10 s
0.1
DC
T_A = 25 °C
Single Pulse
0.01
BVDSS
Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 65668
S10-1052-Rev. B, 03-May-10