SIA975DJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

New Product
SiA975DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.15
10
T_J = 150 °C
T_J = 25 °C
1
0.12
0.09
0.06
I_D = 1.5 A,
T_J = 25 °C
I_D = 5.5 A, T_J = 125 °C
I_D = 5.5 A, T_J = 25 °C
0.03 ^{ID = 1.5 A, TJ = 125 °C}
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.9
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
0.8
15
0.7
I_D = 250 μA
0.6
10
0.5
5
0.4
0.3
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)^*
10
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 μs
1 ms
1
10 ms
100 ms
1s
0.1
10 s
DC
T_A = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 65710
S10-0213-Rev. A, 25-Jan-10