SIA975DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
10
V_GS = 5 V thru 2.5 V
12
8
2V
9
6
SiA975DJ
Vishay Siliconix
6
1.5 V
3
1V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.16
0.14
V_GS = 1.8 V
0.12
0.10
0.08
0.06
0.04
V_GS = 2.5 V
V_GS = 4.5 V
0.02
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 5.6 A
6
4
V_DS = 3 V
2
V_DS = 9.6 V
V_DS = 6 V
0
0
3
6
9
12
15
18
Q_g - Total Gate Charge
Gate Charge
Document Number: 65710
S10-0213-Rev. A, 25-Jan-10
4
2
0
0
1500
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
900
C_iss
600
300
C_oss
C_rss
0
0
3
6
9
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.4
1.3
V_GS = 4.5 V, 2.5 V
I_D = 4.3 A
1.2
1.1
V_GS = 1.8 V
I_D = 1.5 A
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3