SIA929DJ Datasheet, PDF (4/7 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

New Product
SiA929DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.20
0.16
10
T_J = 150 °C
0.12
T_J = 25 °C
0.08
1
0.04
I_D = 3 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.85
0.80
0.75
0.70
0.65
I_D = 250 μA
0.60
0.55
0.50
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10
Pulse (s)
100 1000
Single Pulse Power, Junction-to-Ambient
100 us
1
1 ms
10 ms
0.1
T_A = 25 °C
BVDSS Limited
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 63398
4
S11-1654-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000