SIA929DJ Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
5
V_GS = 10 V thru 3 V
12
4
9
3
V_GS = 2 V
6
2
SiA929DJ
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
3
00
0.20
V_GS = 1 V
0.5
1
1.5
2
2.5
3
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1
0
0
0.5
1
1.5
2
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
0.16
0.12
0.08
0.04
V_GS = 2.5 V
V_GS = 4.5 V
V_GS = 10 V
0
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 4.3 A
8
V_DS = 7.5 V
6
V_DS = 15 V
4
V_DS = 24 V
2
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
800
C_iss
600
400
200
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 3 A
1.6
1.4
V_GS = 10 V, 4.5 V, 2.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63398
www.vishay.com
S11-1654-Rev. A, 15-Aug-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000