SIA923AEDJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual P-Channel 20 V (D-S) MOSFET

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SiA923AEDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
1.5
I_D = 4.9 A
1.4
V_DS = 10 V
6
1.3
V_DS = 5 V
V_DS = 16 V
1.2
4
1.1
1.0
V_GS = 2.5 V; 4.5 V; I _D = 3.8 A
V_GS = 1.8 V; I_D = 1 A
V_GS = 1.5 V; I_D = 0.5 A
2
0.9
0.8
0
0
3
6
9
12
15
18
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
0.18
10
T_J = 150 °C
T_J = 25 °C
1
0.15
0.12
0.09
I_D = 3.8 A; T_J = 25 °C
I_D = 1 A; T_J = 125 °C
I_D = 3.8 A; T_J = 125 °C
0.06
0.03
I_D = 1 A; T_J = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.75
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
0.65
15
0.55
I_D = 250 μA
10
0.45
5
0.35
0.25
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
Pulse (s)
100 1000
Single Pulse Power, Junction-to-Ambient
S13-2636-Rev. A, 30-Dec-13
4
Document Number: 62936
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