SIA921EDJ Datasheet, PDF (4/7 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

SiA921EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
I_D = 4.6 A
8
1.5
I_D = 3.6 A
1.4
1.3
V_GS = 4.5 V
6
1.2
V_DS = 10 V
V_DS = 16 V
1.1
4
1.0
V_GS = 2.5 V
0.9
2
0.8
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
0.20
10
T_J = 150 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
0.9
0.8
0.7
I_D = 250 µA
0.6
0.5
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
www.vishay.com
4
0.15
0.10
I_D = 1 A; T_J = 125 °C
I_D = 3.6 A; T_J = 25 °C
I_D = 3.6 A; T_J = 125 °C
0.05
I_D = 1 A; T_J = 25 °C
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 64734
S09-2310-Rev. B, 02-Nov-09