SIA921EDJ Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

SiA921EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.5
0.4
0.3
I_GSS at 25 °C (mA)
0.2
0.1
0.0
0
3
6
9
12
15
18
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
10^-2
10^-3
10^-4
I_GSS at 150 °C
10^-5
10^-6
I_GSS at 25 °C
10^-7
10^-8
10^-9
10^-10
0
3
6
9
12
15
18
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
15
5
V_GS = 10 V thru 3 V
12
V_GS = 2.5 V
4
9
V_GS = 2 V
6
3
V_GS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.20
3
2
1
0
0.0
1000
T_C = 25 °C
T_C = 125 °C
0.5
1.0
T_C = - 55 °C
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.15
0.10
0.05
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Document Number: 64734
S09-2310-Rev. B, 02-Nov-09
800
C_iss
600
400
200
C_rss
C_oss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
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