SIA913ADJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

SiA913ADJ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.15
0.12
10
0.09
T_J = 150 °C
T_J = 25 °C
0.06
1
0.03
I_D = 3.6 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.15
I_D = 1 A
0.12
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8
0.7
0.09
0.6
T_J = 125 °C
I_D = 250 µA
0.06
0.5
T_J = 25 °C
0.03
0.4
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power, Junction-to-Ambient
0.3
- 50 - 25
100
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
Limited by R_DS(on)*
10
100 µs
1
T_A = 25 °C
Single Pulse
0.1
BVDSS Limited
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 64723
S09-0141-Rev. A, 02-Feb-09