SIA911EDJ Datasheet, PDF (4/7 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

SiA911EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.5
100
I_D = - 2.7 A, V_GS = - 2.5 V
1.4
1.3
I_D = - 2.7 A, V_GS = - 4.5 V
10
1.2
1.1
I_D = - 1 A, V_GS = - 1.8 V
1.0
T_J = 150 °C
T_J = 25 °C
1
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.5
20
I _D = 2.7 A
0.4
15
0.3
0.2
T_J = 125 °C
0.1
T_J = 25 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8
I_D = 250 µA
0.7
0.6
0.5
0.4
0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
10
5
0
0.001
0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power, Junction-to-Ambient
10
Limited by R_DS(on)*
100 µs
1
1 ms
10 ms
100 ms
0.1
1s
10 s
DC
T_A = 25 °C
Single Pulse
0.01
BVDSS
Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 68927
S09-0389-Rev. B, 09-Mar-09