SIA911EDJ Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10³
1 0²
15
10¹
10
1
5
1 0 ^-1
SiA911EDJ
Vishay Siliconix
T_J = 150 °C
T_J = 25 °C
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
10
V_GS = 5 thru 2.5 V
8
V_GS = 2 V
6
1 0 ^-2
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
5
T_C = - 55 °C
4
3
4
V_GS = 1.5 V
2
V_GS = 1 V, 0.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.35
0.28
V_GS = 1.8 V
0.21
0.14
0.07
V_GS = 2.5 V
V_GS = 4.5 V
2
T_C = 25 °C
1
T_C = 125 °C
0
0.0
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
8
I_D = 3.6 A
6
V_DS = 10 V
4
V_DS = 16 V
2
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Document Number: 68927
S09-0389-Rev. B, 09-Mar-09
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
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3