SIA911DJ Datasheet, PDF (4/7 Pages) Vaishali Semiconductor – Dual P-Channel 20-V (D-S) MOSFET

SiA911DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
T_J = 150 °C
1
T_J = 25 °C
0.3
0.25
I_D = 2.8 A
0.2
0.15
T_A = 125 °C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.9
0.1
T_A = 25 °C
0.05
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
0.8
15
0.7
I_D = 250 µA
10
0.6
5
0.5
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
10
Limited by R_DS(on)*
I_D(on) limited
0
0.001 0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power, Junction-to-Ambient
IDM limited
100 µs
1
1 ms
10 ms
100 ms
0.1
1s
10 s
DC
T_A = 25 °C
Single Pulse
BVDSS limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
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4
Document Number: 74329
S-80437-Rev. C, 03-Mar-08