SIA911DJ Datasheet, PDF (3/7 Pages) Vaishali Semiconductor – Dual P-Channel 20-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.0
SiA911DJ
Vishay Siliconix
8
V_GS = 2.5 thru 5 V
6
2V
4
1.5 V
2
0
0.0
0.4
0.8
1.2
1.6
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.3
0.25
V_GS = 1.8 V
0.2
0.15
0.1
V_GS = 2.5 V
V_GS = 4.5 V
0.05
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 4.5 A
6
V_DS = 10 V
4
V_DS = 16 V
2
1.6
1.2
0.8
0.4
0.0
0.0
600
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
500
400
C_iss
300
200
100
C_rss
0
0
4
C_oss
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 2.8 A
1.4
1.2
1.0
V_GS = 4.5 V, 2.5 V, 1.8 V
0.8
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 74329
S-80437-Rev. C, 03-Mar-08
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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