SIA449DJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

SiA449DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.05
10.0
0.04
T_J = 150 °C
0.03
1.0
0.02
T_J = 25 °C
0.01
I_D = 6 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
1.05
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.9
0.75
I_D = 250 μA
0.6
0.45
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
Limited by R_DS(on)*
10
100 μs
1 ms
1
10 ms
100 ms
0.1
10 s, 1s
T_A = 25 °C
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 62644
4
S13-1993-Rev. B, 23-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000